Silica Layer Used in Sensor Fabrication from a Low-Temperature Silane-Free Procedure

Silica (SiO2, silicon dioxide—a dielectric layer commonly used in electronic devices) is widely many types of sensors, such as gas, molecular, and biogenic polyamines. To form silica films, core shell or an encapsulated layer, silane has been a precursor recent decades. However, there are hazards caused by using silane, its being extremely flammable, the explosive air, skin eye pain. avoid these hazards, it necessary to spend resources on industrial safety design. Thus, synthesized without gas which can be determined silane-free procedure presents clean safe solution manufactures. In this report, we radio frequency (rf = 13.56 MHz) plasma-enhanced chemical vapor deposition technique (PECVD) at room temperature. The formed hydrogen-based plasma temperature not process. substrate dominates formation, but distance between electrode (DSTE) methane additive enhance formation Si wafer. This procedure, temperature, only safer friendlier environment also useful fabrication sensors.